摘要
本文报导了InP晶体沿[110]带轴的高分辨结构象。使用JEOL-4000EX顶插式电子显微镜(点分辨1.9nm)对InP晶体沿[110]带轴进行观察,在试样厚度约为35nm,欠焦量约为46.5nm时,拍摄到超高分辨的结构象,原子间距为0.147nm,并且计算出模拟象。贫验结果和模拟象符合的较好。
The superhigh resolution structural image (SRSI) of InP along [110] zone axis was reported. The image
was obtained by means of JEOL-4000EX electron microscopy with top-entry stage. The thickness of thespecimen is about 35nm, and the defocus is about 46.5nm. The computer simulation was carried out, and the re-sults are in good agreement with the experimental observation.
出处
《电子显微学报》
CAS
CSCD
1991年第3期273-276,共4页
Journal of Chinese Electron Microscopy Society