硅的钴溅射引进深能级的研究

Deep Levels in Silicon as a Result of Co-Sputtering

利用DLTS技术详细研究了经钴溅射并在不同温度下的RTA在n型和p型硅里引进的深能级。结果表明在n型硅里有五个深能级生成,这些能级的浓度较低,分布在2×10^(10)—1×10^(11)cm^(-3)范围内。它们可归因于替位的钴原子,钴与RTA的互作用或钴与缺陷的络合物。

Deep levels in n-type and p-type Si, due to Co-sputtering and RTA (Rapid Thermal Annealing) at various temperatures is investigated by using DLTS (Deep Level Transient Spectroscopy) technique. It is found that Co-related defect levels at (Ec-0 20eV), (Ec-0.36eV), (Ec-0.40eV) and(Ec-0.45eV) are produced only for n-type material. The concentration of these defects is rather small and ranges between 2×1010 and 1×1011cm-3. These defect levels can be attributed to substitutional Co atoms, interaction of Co with RTA and Co-defect complexes.