薄栅SiO_2早期电导机制的研究

The Study on the Initial Conductance Mechanism of Thin-Gate SiO_2

本文利用恒定电压作用方法,测量硅栅MOS结构高场隧道电流的时间相关特性,研究了薄栅SiO_2的早期电导机制。认为在高场作用下,影响SiO_2电导的主要因素不仅有SiO_2体内阳极附近局域内的新生正电荷和SiO_2体内原生、新生电子陷阱,还应当包括新生界面态;并且,新生正电荷和新生界面态很有可能源于同一种产生物理机制。

The initial conductance mechanism of the thin gate SiO2 has been systematically studied by measuring the time-dependent tunneling current characteristics under constant voltage stress. It has been indicated that the oxide conductance is not only affected by initial and generated trapping electrons and newly generated positive charges in the SiO2 bulk, but also affected by generated interface states. The generated positive charges and the generated interface states result probably from the same physics generation mechanism.