应用于硅化物自对准技术的CoSi_2薄膜特性及形貌研究

The Characterictics and Morphologies of CoSi_2 in Self-Aligned Technique

本文应用炉退火和快速退火(RTA)两种方法,使Co和Si热反应制备界面较平整、电阻率低(～16μΩ·cm)的CoSi_2薄膜。采用XRD、AES、TEM(横截面)、SEM、四探针等分析测试手段,详细研究了Co和Si、SiO_2之间的反应,CoSi_2薄膜的电学特性及CoSi_2/Si,CoSi_2,SiO_2界面形貌。结果表明,CoSi_2是除TiSi_2外另一个可用于MOS自对准技术的硅化物。

In this Paper, Thermally reactive CoSi2 films with smooth interface and low resistivity by FA and RTA were introduced. The XRD, AES, TEM (cross-section), SEM and Four-point probe tecniques were used to analyze the reactions between Co and Si as well as Co and SiO2, electroconduc-tivity of CoSi2 films, interface morphologies of CoSi2/Si and CoSi2/SiO2 structures. The results show that CoSi2 can be applied to self-aligned technology like TiSi2.