超薄石英晶片超精密抛光实验的研究

Experimental study on ultra-precision polishing for ultrathin quartz substrates

为了解决超薄石英晶片高表面质量的加工问题,以及寻求一种高效低成本的加工方法,将一种新的超精密抛光工艺应用到超薄石英晶片的加工中。给出了加工过程中的抛光原理,制定出了在研磨和抛光过程中的最优实验条件,并对加工后超薄石英晶片的粗糙度和厚度做了详细的分析;讨论了磨粒的尺寸对表面粗糙度和材料去除率的影响,同时对加工过程的材料去除机理做了论述,以表面粗糙度和厚度为评价目标对超薄石英晶片的加工特性和表面质量进行了评价。研究结果表明:使用该实验的工艺加工超薄石英晶片可以得到厚度为99.4μm、表面粗糙度为0.82 nm的超光滑表面;同时,该研究还发现通过延长抛光时间可以减小石英晶片的表面残余应力,可有效控制石英晶片四角"翘曲"现象,得到更好的平面度和平行度。

In order to solve processing problems of the high surface quality of the uhrathin substrates, and searching for a high efficiency and low cost manufacturing processing method, a new ultra-precision polishing process was applied to the process of ultrathin quartz substrates. The principle of the polishing process was given, the optimal conditions for the lapping and polishing process were formulated. A detailed analysis was done on the roughness and thickness of the ultrathin quartz substrates, the influence of particle size on the surface roughness and material removal rate was discussed. The material removal mechanism in the process of ultra-precision polishing was also discussed. The surface rough- ness and thickness were used as the evaluation target, and the processing characteristics and surface quality of ultrathin quartz substrates were evaluated. The experimental results indicate that an extremely smooth surface of the quartz substrate is obtained in the ultra-precision polishing process, the ultrathin quartz substrates with thickness is 99.4μn and the best surface roughness is Ra O. 82 mn. The surface residual stress of the quartz substrates can be reduced by increasing the polishing time, at the same time, the flatness and parallelism can be controlled very well.