SiGe-OI对称脊形定向耦合器的研究

Research on SiGe-OI Symmetrical Ridge Directional Coupler

基于SiGe-OI新型半导体材料,分析了SiGe-OI对称脊形定向耦合器的横向和纵向耦合理论,在BPM模拟软件平台上,建立了SiGe-OI对称脊形定向耦合器结构,分别模拟了其完全耦合和3 dB耦合的光场传输特性,给出了脊形宽度、耦合间距、光波波长和Ge含量对耦合长度的影响;重点分析了耦合系数、脊形宽度、耦合长度、耦合间距、光波波长以及Ge含量等物理量之间的关系,得出了为了便于光电集成,可以在本文模拟的参数值范围内,选择较大的脊形宽度和较小的耦合间距和Ge含量的结论,为SiGe-OI对称脊形定向耦合器的研制提供了技术参考。

In this paper, based on new SiGe-OI semiconductor materials, vertical and horizontal coupling theory of SiGe-OI symmetrical ridge directional coupler are analyzed. The structure of SiGe-OI symmetri- cal ridge directional coupler is built by BPM simulation software. Full coupling and 3dB coupling of cou- pler are respectively simulated, and ridge width, coupling gap, wavelength and the effects of Ge contents upon coupling length are given out. The main relationship among coupling coefficient, ridge width, cou- pling length, coupling gap, wavelength and Ge contents are analyzed in priority. With the range of simu- lation parameter values in this paper, larger ridge width, small coupling gap and small Ge contents are better for optoelectronic integration in conclusion, and this research provides a technical reference for the manufacturing of SiGe-OI symmetrical ridge directional coupler.