摘要
建立了一套完整的直接提取高电子迁移率器件(HEMT)小信号模型等效电路参数的新方法。采用Open去嵌图形对器件寄生电容进行近似提取,避免了ColdFET方法提取的寄生参数为负值的现象;通过Yong Long方法对寄生源电阻进行提取,减少了模型参数提取复杂度。与其它文献报道的小信号模型参数提取方法相比,该方法物理意义简明清晰,提取速度快,并且对新材料、新器件结构有较强的实用性。
An improved parameter-extraction method for high electron mobility transistors （HEMT） small-signal equivalent circuit was presented in this paper. Parasitic capacitors were extracted by using open de-embedding pads to avoid obtaining impractical negative parameter in the ColdFET parameter- extraction method. Additionally, the parasitic source resistor was obtained by Yong Long technology, which reduced the complexity of traditional methodology. Compared with the available, the method was comparatively clear and concise in physical significance, very fast in extraction speed and extensively applicable for new material and device structures.
出处
《信息技术》
2013年第9期135-139,共5页
Information Technology
