热沉积法制备纳米二硫化钼薄膜及其光电特性研究

Electrical properties of nano MoS_2 thin film prepared by thermal evaporation deposition

以MoS2粉末为原料，以氩气为携载气体，在400-600℃温度范围内利用热蒸发方法在硅衬底表面制备了不同厚度的MoS2薄膜．利用X射线衍射和扫描电子显微镜分析了MoSz薄膜的结构和表面形貌，发现Mos2薄膜由多晶MoS2粒子组成，颗粒均匀，平均纳米颗粒尺寸约为60nm．利用紫外可见光光谱仪测量了其吸收特性，发现样品在720nm附近有很强的吸收．应用霍尔效应和伏安法研究了Mos2／Si样品的接触特性和电子的运输特性，发现该异质结具有良好的整流特性，即正向电压下电流随电压呈指数增长，而在反向偏压下漏电流很小，电子迁移率可达到6．730×10^2cm2／（V·s）．实验结果表明MoS2薄膜具有良好的电学特性，可用来制备晶体管和集成电路等器件．

MoS2 thin films were deposited on Si substrates by thermal evaporation of MoS2 powder with argon as the carrying gas at 400~ 600 ℃. The structure and surface morphology were analyzed by X-ray diffraction and scanning electronic microscopy. It was found that the film consisted of MoS~ nanoparticles, the average size of which was about 60 nm. The film gave strong absorption near 720 nm. We also studied the contact and other electrical properties of the MoS2/Si heterojunction by means of Hall effect and V-I measurements. The electron mobility of the MoS2 film was up to 6.730 ×10^2cm2/（V·s） and the heterojunction has good rectification properties. These results showed that the MoS2 thin films had high quality of electrical properties and could be used to fabricate transistor and integrated circuit.