硅片多线切割的温度场仿真研究

Research on Temperature Distribution in Silicon Wafers Slicing with Wire Saw

硅片切割的温度场分布对硅片表面加工质量具有十分重要的影响。以硅材多线切割的温度场为研究对象,在分析硅片多线切割工作原理的基础上,建立了数值分析模型,充分考虑了切割发热机理以及空气与切削液的冷却作用。采用参数化编程与生死单元技术,仿真分析了硅片切割的温度场分布情况,研究了线锯张力、硅材进给速度对硅片温度场分布的影响。仿真结果显示:硅切片的温升与线锯张力成正比关系,张力越大,温升越明显;进给速度对硅切片的温升曲线有一定的影响,但硅材在不同进给速度下的最终温度几乎相同。论文为研究硅片的切割变形机理、改善硅片表面质量等提供了一定的理论参考。

Temperature distribution can influence surface machining quality of silicon wafers, especially for large wafers. In this paper, based on the working principle of silicon wafer wire-saw slicing, an numer- ical analysis model is established. Through parametric programming and life-death unit technology, the temperature distribution of wafers during slicing has been simulatied, and the influences of wire-saw ten- sion and feeding speed on the temperature distribution has been studied. The simulation results show that： the peak value of wafers＂ temperature during slicing is depended on the tension of wire saw, and bigger ten- sion will cause higher temperature rise; difference feeding speeds cause different temperature variation curves, but the temperatures are close to each other when the cutting is end. The study can lay the foundation for re- search on cutting deformation mechanism and improvement on the surface quality of silicon wafer.