类氖氙离子基态的双电子复合过程研究

Detailed level-by-level study of dielectronic recombination for neon-like xenon

使用相对论组态相互作用方法计算了电子温度在0.01E I≤kT e≤10E I(E I=3 332 eV,是类钠Xe43+离子的第一电离能)范围内基态类氖Xe44+离子的双电子复合(DR)速率系数。对类氖Xe44+离子基态DR过程贡献最大的是(2s2p)73ln'l'双激发自电离组态,对总DR速率系数的贡献略大于90%,其中最主要的贡献来自(2s2p)73l3l',(2s2p)73l4l'组态,占总速率系数的70%以上。对于通过(2s2p)73ln'l'类钠氙离子双激发自电离组态的双电子复合过程,l'>8的贡献可以忽略,n'>12的贡献满足n'-3组态-组态外推法则。

The dielectronic recombination （DR） rate coefficient for neon-like xenon in the ground state has been performed using relativistic configuration interaction （RCI） method over a wide temperature ranging from 0. 01E to 10El （E = 3 332 eV）, where E is the ionization energy of the Na-like xenon. The results show, the domain contribu- tion comes from （2s2p） 731n＇l＇ series, which is about 90% of the total DR rate coefficient, in which the main contribu- tion comes from （2s2p）73131＇ and （2s2p）73141＇ configurations, and the proportion is more than 70% of the DR rate coefficient for （2s2p）73ln＇l＇ complex. The contribution of （2s2p）73ln＇l＇ complex with 1＇ 〉8 are found to be negligible. The contribution of high Rydberg states of （2s2p） 731n＇l＇ complex obeys the complex-complex n＇ - extrapolation.