摘要
Al/Cu键合界面金属间化合物的形成是导致微电子器件失效的重要因素之一,总结了微电子器件生产和使用过程中Al/Cu键合界面金属间化合物的生长规律,分析了Al/Cu键合系统的失效机制。热超声键合过程中,Al焊盘上氧化铝层的破裂使金属间化合物的形成成为可能,键合及器件使用过程中,金属间化合物和柯肯德尔空洞的形成和长大最终导致键合失效。采用在Al焊盘上镀覆Ti过渡层的方法,可有效降低键合系统中Cu原子的扩散速度,抑制金属间化合物的生长,从而提高电子元器件的可靠性。
The formation of intermetallic compounds （IMC） on the Al/Cu bonding interface is an important factor leading to the failure of microelectronic components. The IMC growth rule on the interface during the process of welding and application is summarized, and the failure mechanisms of Al/Cu bonding system is analyzed. During ther- mosonic bonding process, alumina fragmentation make the formation of IMC become possible, the IMC and Kir- kendall void ultimately lead bonding failure. The diffusion rate of Cu atoms into Al can be effectively reduced by the use of Ti coated Al pad, this routing is contributed to suppress the growth of IMC, and improve the reliability of electronic components.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2013年第17期117-120,共4页
Materials Reports
基金
教育部新世纪优秀人才计划(NCET-11-0127)
中央高校基本科研业务费
