摘要
研究了空气掺杂对化学气相沉积(CVD)法制备的双层石墨烯底栅型场效应管电输运性能的影响。分别在大气、真空(<1Pa)、氮气以及不同湿度环境中测试了石墨烯场效应管的电学性能,测试结果表明大气中水分子和氧气分子的吸附导致的空穴掺杂作用使石墨烯的电学性能发生了严重退化,随着石墨烯表面吸附水分子和氧气分子的增多,狄拉克转变点电压向正方向的偏移量逐渐增大,空穴掺杂浓度增大,载流子迁移率减小。
The electrical transport properties of bilayer graphene FET grown by CVD methods on SiO2/Si substrate was investigated in room temperature with different ambient environment.The graphene FET electrical properties were tested in atmosphere,vacuum (<1 Pa),pure nitrogen and moist air with different humidity,and the results show that the graphene FET electrical properties degraded greatly in atmosphere because of the adsorbates (mainly oxygen and water molecules) acting as hole-doping,which strongly affected the carrier density and mobility of graphene.With increasing the adsorbates molecules,the voltage of Dirac point increased,the mobility of hole (electron)decreased and the charged impurity density increased.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2013年第18期39-41,70,共4页
Materials Reports
基金
国家自然科学基金(11104348)
国防科技大学校预研项目(JC11-02-08)
关键词
化学气相沉积
石墨烯
场效应管
空气掺杂
载流子迁移率
chemical vapor deposition
graphene
field-effect transistor
air-doping
carrier mobility