摘要
介绍了单平衡混频器和Lange耦合器的工作原理,基于0.15μm GaAs PHEMT工艺技术,设计了一款Ka波段单平衡宽带混频器芯片,仿真结果显示该混频器芯片在30~40 GHz频率范围内获得了良好的性能,变频损耗小于10 dB,射频-本振隔离度大于30 dB,中频-本振隔离度大于35 dB,中频-射频隔离度大于40 dB,同时具有优良的驻波特性,P-1 dB功率大于0 dBm。该芯片尺寸为1.7 mm×1.8 mm。对该混频器进行了流片,并进行测试,测试结果表明,该混频器变频损耗约为8 dB,各端口间隔离度均优于30 dB。测试结果和仿真结果一致性良好。采用Lange耦合器是该混频器的特点,使它获得了良好的性能指标和更宽的带宽。
A Ka-band single-balanced mixer and Lange coupler was introduced. A Ka-band GaAs monolithic microwave integrated circuit (MMIC) broadband single-balanced mixer was designed and fabricated based on O. 15 p^m GaAs PHEMT process. The simulation results show that it performed well at the frequency range from 30 GHz to 40 GHz, the conversion loss is less than 10 dB. The RF-LO isolation is more than 30 dB. The IF-LO isolation is more than 35 dB. The IF-RF isolation is more than 40 dB. It has alowVSWRandtheP_~dsismorethan0dBm. The chip size isl. 7 mmxl. 8 mm. The mixer was fabricated and tested. The test results show that the conversion loss is about 8 dB, the isolation among the various ports is more than 30 dB. The test results and the simulation results are in good consistency. Lange coupler is the key part of the mixer, which helps the mixer obtain a good performance and wider bandwidth.
出处
《半导体技术》
CAS
CSCD
北大核心
2013年第9期661-665,共5页
Semiconductor Technology
关键词
混频器
单平衡
晶体管(PHEMT)
LANGE耦合器
变频损耗
mixer
single-balanced
pseudomorphic high electron mobility transistor (PHEMT)
Lange coupler
conversion loss