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环境半导体的研究动向 被引量:1

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作者 江涛 晓晨
出处 《激光与光电子学进展》 CSCD 2000年第11期21-26,共6页 Laser & Optoelectronics Progress
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  • 1Borisenko V E. Semiconducting Silicides[M].Beilin:Springer-Verlag,2000.1-88.
  • 2Migas D B,Shaposhnikov V L,Filonov A B. New Semiconducting Silicide Ca3Si4[J].Journal of Physics:Condensed Matter,2000,(34):3460277.
  • 3Manfrinetti P,Fornasini M L,Palenzona A. The Phase Diagram of the Ca-Si System[J].Intermetallics,2000,(03):223-228.
  • 4Yang Z W,Shi D M,Wen B. First-Principle Studies of Ca-X (X =Si,Ge,Sn,Pb) Intermetallic Compounds[J].Journal of Solid State Chemistry,2000,(01):136-143.
  • 5Segall M D,Philip J D,Proberl M J. First Principles Simulation..Ideas,Illustrations and the CASTEP Code[J].Journal of Physics:Condensed Matter,2002,(11):2717.
  • 6Broyden C G. The Convergence of a Class of Double-Rank Minimization Algorithms,2 The New Algorithm[J].Journal of the Institute for Mathematics and Applications,1970,(03):222-231.
  • 7Fletcher R. A New Approach to Variable Metric Algorithms[J].Computer Journal,1970,(03):317-322.
  • 8Goldfarb D. A Family of Variable-Metric Methods Derived by Variational Means[J].Mathematics ofComputation,1970,(109):23-26.
  • 9Shanno D F D F. Conditioning of Quasi-Newton Methods for Function Minimization[J].Mathematics of Computation,1970,(111):647-656.
  • 10Vanderbilt D D. Soft Self-Consistent Pseudopotentials in Generalized Eigenvalue Formalism[J].Physical Review B,1990,(11):7892-7895.

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