NiFeCr/NiFe/MgO/Ta薄膜制备及热处理研究

The study of the preparation and the heating treatment of NiFeCr/NiFe/MgO/Ta films

采用磁控溅射制备了NiFeCr(4.5nm)/NiFe(10nm)/MgO(4.0nm)/Ta(5.0nm)薄膜,并对薄膜进行真空磁场退火。退火后薄膜磁电阻变化率显著提高,400℃退火后达到3.02%,之后随着退火温度的升高,磁电阻变化率下降。XRD结果表明,薄膜不仅具有很强的NiFe(111)织构,同时还出现了MgO的(111)衍射峰。随退火温度的升高,MgO(111)衍射峰的强度有所降低。

The NiFeCr（4.5nm）/NiFe（10nm）/MgO（4.0nm）/Ta（5.0nm） films were prepared by magnetic sputtering and were annealed in a vacuum furnace with an applied plane field. The anisotropic magnetoresistance （AMR） increases dramatically after the annealing and it reaches to 3. 02% after annealing at 400℃. After wards, the AMR decreases with a further increase of the heating treatment temperature. The XRD results show that the perfect diffraction peak of NiFe（111） was well presented. At the same time the MgO（111） was presented also and the intensity of the MgO（111） decreases with the increase of the heating treatment temperature.