Ag掺杂In_2S_3薄膜的拉曼光谱研究

Raman spectroscopy of In_2S_3:Ag thin films

利用拉曼光谱结合XRD与SEM测试对未掺杂与Ag掺杂的In2S3薄膜进行了分析研究。XRD测试结果确定了In2S3的物相,并表明掺杂后晶粒尺寸发生一定的变化;拉曼光谱研究表明,掺杂后232、272及300cm-1 3条拉曼谱线发生红移,这是由于掺杂后晶格膨胀引起的。结合部分拉曼谱线半高宽的展宽证实了掺杂后薄膜中存在间隙Ag原子;SEM的测试结果进一步证实Ag掺杂后In2S3晶格存在膨胀,并说明了In2S3薄膜的生长方式。

The characteristics of undoped and silver doped In2S3： films were studied via Raman spectroscopy, X- ray diffraction and scanning electron microscope. The phase of In2S3 films was identified by XRD which showed the change of grain size after silver doped. As the films doped with silver, the red shift of Raman bands （232, 272 and 300cm^-1） of In2S3 films took place. The broadening of linewidths （FWHM） of some Raman bands indicated the exist of interstitial silver ions. The SEM pictures showed the growth pattern and the larger grain size of In2S3： Ag films.