摘要
用射频磁控溅射在单晶硅上沉积Si1-x Gex薄膜。溅射的SiGe薄膜样品,用俄歇电子谱(AES)测定其Ge含量,约为17%,即Si0.83Ge0.17。样品分别做高温磷、硼扩散,经XRD测试为多晶态,制得n,p-poly-Si0.83Ge0.17。在n-poly-Si0.83Ge0.17上分别溅射Ni、V、W、Cu、Pt、Ti、Al、Co膜,做成金属/n-poly-Si0.83Ge0.17肖特基结。利用I-V测试数据进行接触参数的提取,从而定量研究金属的功函数、金属膜厚以及快热退火温度对肖特基接触特性的影响。结果发现,肖特基势垒高度(SBH)与金属的功函数有微弱的正相关,Al/n,p-poly-Si0.83Ge0.17接触存在Shannon效应,金属膜厚对Co/n,p-poly-Si0.83Ge0.17接触特性有不同的影响,随快热退火温度的升高,Ni、V、W、Co、Cu、Pt、Ti、Al八种金属在n-poly-Si0.83Ge0.17上的肖特基势垒高度和理想因子未见有一致的变化规律,但存在不均匀性。
Si1-xGex films were deposited by RF magnetron sputtering on monocrystalline Si substrates.The Ge content of about 17％ was determined by AES method in the as-deposited Si1-xGex film,that is Si0.83Ge0.17· Some Si0.83Ge0.17 films were doped with phosphorus and the others were doped with boron through thermal diffusion to form n,p-type polycrystalline films,the n,p-poly-Si0.83Ge0.17,which are verified by XRD.And metal/n-poly-Si0.83Ge0.17/c-Si Schottky junctions were made by sputtering Ni、V、W、Cu、Pt、Ti、Al、Co on n-poly-Si0.83Ge0.17· The effects of work function of metal,metal film thickness and rapid thermal annealing temperature on Schottky contact properties were studied quantitatively.It has been found that,the Schottky barrier height （SBH） has a weak positive correlation with the work function of metals.Shannon effect exists in Al/n,p-poly-Si0.83Ge0.17 system.And the metal film thickness has different influence on Co/n,p-poly-SiSi0.83Ge0.17·With the increase of rapid thermal annealing temperature,the SBH and ideality factor of Ni、V、W、Co、Cu、Pt、Ti、Al on n-poly-Si0.83Ge0.17 show no consistent variation tendency,but the inhomogeneity does exist.
出处
《真空》
CAS
2013年第5期17-20,共4页
Vacuum
