高能电子照射对金刚石中缺陷电荷状态的影响

Effect of high-energy electron exposure on the charge states of defects in diamond

金刚石经电子辐照后会形成大量的点缺陷,而这些缺陷很多都是带有电荷的.提出一种用于研究缺陷电荷状态的新思路,即利用扫描电子显微镜(SEM)的高能电子照射辐照区域,通过比较SEM照射前后的低温光致发光光谱,为缺陷电荷状态的确定提供了一些依据.

A great number of point defects are created in diamond by electron irradiation, most of which are charged. In this paper, we come up with an interesting thought to determine the charge states of these defects in diamond. The irradiated regions are exposed by high-energy electrons with a scanning electron microscopy （SEM）, and then are characterized by the low temperature micro- photoluminescence （PL） technology. Some evidences to determine the charge states of defects are obtained by comparing the PL spectra between the cases with and without SEM exposure.