磷化铟单晶片抛光工艺研究

Technology Research on Micro Hole back drilling

磷化铟是制作高速器件和电路、光电集成电路的重要衬底材料,其抛光片的表面质量对后续的外延及器件性能有着重要的影响。表面粗糙度作为表征表面质量的重要参数指标,需要在抛光过程中严格控制。分析了磷化铟单晶片的抛光机理,通过对比不同抛光工艺条件下的表面粗糙度状况,分析了抛光布表面结构对晶片表面粗糙度的影响,通过改进精抛布表面结构,加工出了表面粗糙度小于0.3 nm的磷化铟双面抛光片。

Indium phosphide （InP）is an important substrate material for making high-speed device and circuit, opto-electronic integrated circuit. The surface quality of InP polished wafers had obviously effect on epitaxial process and device performance. Surface roughness, which used to represent the surface quality of polished wafers, is an important parameter. In polish process, the surface roughness should be strictly controlled. The mechanism of InP polishing was studied. The surface morphology of pad was proved to be significant to the surface roughness of wafer. The perfect mirror was prepared by improved surface morphology of pad, and the surface roughness was less than 0.3 nm.