BaO-Nd_2O_3-Sm_2O_3-TiO_2薄膜的微波特性

Microwave Properties of BaO-Nd_2O_3-Sm_2O_3-TiO_2 Thin Film

在制作完底电极的LaAlO3(100)衬底上,利用磁控溅射法制备了一层BaO-Nd2O3-Sm2O3-TiO2(BNST)系薄膜,再对薄膜进行退火处理。X线衍射仪(XRD)分析表明,经退火处理的BNST薄膜结晶效果良好。采用薄膜电容结构来实现电容的测量,主要研究了BNST薄膜电容的频率特性。阻抗分析测试和矢量网络分析测试表明,在测试频率为1MHz时,介电常数为58.3,介电损耗小于2%;在1GHz的测试频率下,介电常数为57.5,介电损耗小于3%。研究表明,制备的BNST薄膜的频率特性稳定,基本满足微波频率下使用的要求。

A layer ofBaO-Nd203-Sm2O3-TiO2 （BNST） thin films were prepared by RF magnetron sputtering technique on I.aA103 （100） substrates on which the bottom electrode has been fabricated, then the films were an- nealed to improve its crystallization. X-ray diffraction （XRD） analysis showed that BNST film after annealing has good crystallization. We use plate capacitor structure to measure the frequency characteristics of capacitor. This pa- per mainly studies the BNST film capacitor＇s frequency characteristics. LCR and vector network analyzer tests shows that at the frequency of 1 MHz, the dielectric constant is 58.3, the dielectric loss is less than 2%, while at the fre- quency of 1 GHz ,the dielectric eonstant is 57.5, the dielectric loss is less than 3%. The results show that the fre- quency characteristic of prepared BNST film is stable, and basically meet the requirements for using in the micro- wave frequencies.