超低温烧结ZTT陶瓷微结构及介电性能研究

Microstructure and Dielectric Property of Ultra-Low-Fire ZTT Ceramics

采用传统固相反应法制备Zn2Te3O8-30%TiTe3O8(ZTT,质量分数)粉体,在低于600℃的管式气氛炉中烧结,利用XRD、SEM及微波网络分析仪等手段对不同热处理后的样品进行分析,并测试介电性能。实验表明,ZTT能在超低温下烧结成瓷,且介电性能良好(低频测试下介电常数εr=19～27,损耗低于3%,高频下品质因数与频率之积Q×f=56 191GHz,频率温度系数τf=1.66μ℃-1),为制作低成本薄膜电容提供可能。

The Zn2Te3O8-30% TiTe3 08 （ZTT） powder was prepared using the solid-state reaction technique, and sintered at temperature low than 600 ℃ in atmosphere furnace. Then the samples were analyzed by XRD, SEM and microwave network analyzer. The result showed that ZTT could be sintered in ultra-low temperature with pret- ty good dielectric properties（at 1 MHz measured frequency, the dielectric constant and the dielectric loss were 19-27 and low than 3%, respectively, at high frequency, the Q×f and rf of ZTT ceramics were 56 191 GHz and 1.66 μ℃^-1, respectively）. Thus it was possible to produce low cost thin film capacitance.