SnO_2纳米线制备及缺陷态发光研究

On Synthesis of SnO_2 Nanowires and Photoluminescence of Defect State

利用气相传输法制备二氧化锡纳米线,通过X射线衍射(XRD)和扫描电子显微镜(SEM)及高分辨透射电子显微镜(TEM)对产物晶体结构、形貌和微结构进行了表征.该样品荧光光谱中主要包含两个发光带,分别位于360 nm及445 nm.X射线光电子能谱(XPS)结果显示该纳米结构产生的蓝色缺陷态辐射主要源于氧空位产生的缺陷态深能级.

SnO2 nanowires are synthesized by vapor transport method,and then their crystal structure,morphology and microstructure are evaluated and characterized by X-ray diffraction( XRD),Scanning electron microscopy( SEM) and High-resolution transmission electron microscopy( TEM). Photoluminescence of the SnO2 nanowires mainly comprises two emission bands separately located at 360 nm and 445 nm. The radiation of the blue defect state is attributed to the deep level from oxygen vacancy,which can be confirmed by X-ray photoelectron spectroscopy( XPS).