期刊文献+

PS模板法制备铜纳米颗粒 被引量:1

Preparation of Cu Nano-particles With PS Template
下载PDF
导出
摘要 采用双槽电化学腐蚀法制备多孔硅(porous silicon,PS),对其进行超声后处理.以PS为模板采用一步浸渍沉积法制备大小均匀、形状规则的铜纳米颗粒,并研究沉积时间对纳米颗粒形状、尺寸的影响.结果表明:PS超声后处理并未造成其物理和化学结构的破坏,大量的硅氢键(SiH x)和蜂窝状多孔结构(直径150 nm左右)分别为纳米铜的形成和生长提供了还原剂和场所;沉积时间对铜纳米颗粒形貌具有重要影响,当沉积时间为40 s时得到形状和尺寸较为均匀的铜纳米颗粒. Porous silicon (PS) was prepared by the double-cell electrochemistry corrosion, and undergone an ultrasonic post-treatment after etching. The Cu nanoparticles with the uniform size and regular shape were prepared by one step impregnation on the treated PS template. The effect of deposition time on shapes and sizes of nanoparticles was investigated. Results show that ultrasonic post-treatment does not destroy the physical and chemical structure of PS, plenty of SiHx species and honeycomb-like porous structure (about 150 nm) provide reduction and site of formation and growth of Cu nanoparticles, respectively. The deposition time plays a key role on the shape and size of Cu nano-particles, and Cu nano-particles with the uniform size and regular shape are obtained when the time was 40 s.
出处 《北京工业大学学报》 CAS CSCD 北大核心 2013年第10期1581-1585,共5页 Journal of Beijing University of Technology
基金 教育部新世纪优秀人才支持计划项目(NCET-07-0387) 云南省教育厅科学研究基金资助项目(2011J074)
关键词 多孔硅(PS)模板 浸渍沉积 铜纳米颗粒 porous silicon (PS) template impregnation deposition Cu nano-particles
  • 相关文献

参考文献21

二级参考文献103

共引文献90

同被引文献41

  • 1Uhlir A.Electrolytic shaping of germanium and silicon[J].Bell System Technical Journal,1956,35(2):333-347.
  • 2Canham L T.Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers[J].Appl Phys Lett,1990,57(10):1046-1048.
  • 3Canham L T.Gaining light from silicon[J].Nature,2000,408:411-412.
  • 4Lee J S,Cho N H.Nanostructural and photoluminescence features of nanoporous silicon prepared by anodic etching[J].Applied Surface Science,2002,190(1-4):171-175.
  • 5Jung K H,Shih S,Kwong D L.Developments in luminescent porous Si[J].Journal of the Electrochemical Society,1993,140(10):3046-3064.
  • 6Chen Q W,Zhu J S,Li X G,et al.Photoluminescence in porous silicon obtained by hydrothermal etching[J].Physics Letters A,1996,220(4-5):293-296.
  • 7Splinter A,Vitae A,Vitae J S,et al.New porous silicon formation technology using internal current generation with galvanic elements[J].Sensors and Actuators A:Physical,2001,92(1-3):394-399.
  • 8Li X,Bohna P W.A metal-assisted chemical etching in HF/H2O2 produces porous silicon[J].Applied Physics Letters,2000,77(16):2572-2574.
  • 9Ksendzov A,Fathauer R W,George T,et al.Visible photoluminescence of porous Si1-xGex obtained by stain etching[J].Applied Physics Letters,1993,63(2):200-202.
  • 10Richter A,Steiner P,Kozlowski F,et al.Current-induced light emission from a porous silicon device[J].IEEE Electron Device Letters,1991,12:691-692.

引证文献1

二级引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部