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TiO_2掺杂量对TZO陶瓷靶材性能的影响 被引量:3

Effects of TiO_2 doping amount on the properties of TZO ceramic targets
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摘要 用常压烧结方法制备了掺钛氧化锌(TZO)陶瓷靶材,研究了TiO2掺杂量对TZO靶材的微观形貌、相对密度、抗弯强度和电阻率的影响。结果表明:添加适量TiO2利于TZO靶材的致密化,掺杂过量TiO2会使TZO陶瓷中析出Zn2TiO4;随TiO2掺杂量增大,靶材的相对密度和抗弯强度先增大后减小,电阻率则先减小后增大。当w(TiO2)为1.5%时,靶材相对密度获得最大值98.32%;当w(TiO2)为1.0%时,所制靶材抗弯强度最大(98.39 MPa),电阻率最小(2.586×10–3·cm),且其相对密度为98%。 TZO ceramic targets were prepared by conventional sintering method. The effects of TiO2 doping amount on the micro-morphology, relative density, bending strength and resistivity of obtained targets were studied. The results show that suitable amount of TiO2 doping is good for densification of TZO targets, but an excess TiO2 doping makes Zn2TiO4 separate out from TZO ceramic. With the increase of TiOz doping amount, the relative density and bending strength of TZO targets increase first and then decrease, while the resistivity decreases first and then increases. The highest relative density of 98.32% is achieved when the w(TiO2)is 1.5%; and the lowest resistivity of (2.586×10^-3Ω·cm, the highest bending strength of 98.39 MPa and a high relative density of 98% are acquired when w(TiO2) is 1.0%.
作者 刘天成
出处 《电子元件与材料》 CAS CSCD 北大核心 2013年第10期14-16,20,共4页 Electronic Components And Materials
关键词 TZO TiO2掺杂量 微观形貌 相对密度 抗弯强度 电阻率 TZO TiO2 doping amount micro-morphology relative densi/y bending strength resistivity
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