有限深球方势阱研究Au纳米粒子自组装体系的I-V特性

Simulation of I-V Property of An Nanoparticle Self-assembly System Using Finite Well Potential

本文在量子点的球方阱模型基础上，利用转移哈密顿法计算了纳米粒子自组装体系电子的跃迁几率．在此基础上，通过求解电子跃迁的主方程即可得到该体系的隧穿电流与偏压的关系．

In this paper, the hopping rates of electrons in nanoparticle self-assembly system are computed using transfer Hamiltonian based on the finite well potential model of quantum dots. Then the relation between tunneling current and bias voltage is gotten by the solution of the master equation of electron hopping.