YIG调谐器件漏磁特性仿真分析

Simulation analysis on flux leakage of YIG-tuned device

YIG调谐器件在现代电子对抗系统中应用广泛,但针对YIG调谐器件的漏磁特性缺乏定量分析。通过对YIG调谐器件的漏磁特性建模及仿真,特别是针对测试样品射频连接器区域磁场仿真和漏磁测量,得到其漏磁分布曲线,实现了YIG调谐器件的漏磁定量分析,为YIG调谐器件工程应用中抗漏磁干扰设计提供了依据。此外,该研究对于有效降低YIG调谐器件的漏磁干扰,提高整机系统技术指标和改善工作性能有着一定的指导意义。

YIG-tuned devices is widely used in modem electronic system, but their flux leakage characteristic is seldom reported. In this paper, modeling and simulation is given for flux leakage distribution of YIG-tuned device by Maxwell 3D soRwere, providing a quantitative analysis of field leakage distribution. The analysis result supplies a design reference for anti-flux-leakage disturbance in engineering applications of YIG-tuned devices. Additionally, this research is of guidance for degrading the flux leakage disturbance of YIG-tuned device, and resultantly improving the performance of overall unit related to the YIG-tuned devices.