掺杂元素Ge和Ce及掺杂量对钽丝组织和性能的影响

Effect of doping Ge and Ce on microstructure and properties of tantalum wire

通过显微组织观察、烧结折丝及抗氧脆性测试,研究了不同退火温度下,掺杂元素(Ge和Ce)和掺杂量对钽丝微观组织以及烧结折丝、抗氧脆性的影响。研究表明:随着Ge或Ce掺杂量的增加,钽丝的再结晶温度升高,组织晶粒细化,其中掺Ce比掺Ge细化效果更加明显;钽丝烧结折丝次数随着掺Ge或Ce量的增加而递增;在同样条件下,随着钽粉氧含量的增加,钽丝抗氧脆性变差。掺Ge和Ce的钽丝比仅掺Ge的钽丝抗氧脆性要好,而在钽粉氧含量(≤1500(10-6,质量分数))不很高时,掺Ge钽丝又要比纯钽丝的抗氧脆性要好。

Effects of doping Ge and Ce and annealing treatment at different temperatures on microstructure and properties of tantalum wire were investigated by means of observation of microstructure and testing of bending fracture of tantalum wire after sintering and sintering the tantalum wire pressed into tantalum powder containing oxygen. The results show that the recrystallization temperature of tantalum wire increases and the grains are refined with the increase of amount of doping Ge or Ce. It is found that, the effect of doping Ce on the refinement of the grains is more obvious than that of doping Ge. The bending times to fracture of tantalum wire after sintering increase with increase amount of doping Ge or Ce. Under the same condition,the bending resistance to frature of the tantalum wire after pressing into tantalum powder and sintering worsens with the increase of oxygen contents of the tantalum powder, and the bending resistance of tantalum wire doped with Ge and Ce is better than that of tantalum wire doped Ge,while that of tantalum wire doped with Ge is better than that of pure one when oxygen contents in the tantalum powder is mild （ 〈 1500（ 10-6） ）.