InAs/GaAs量子点生长中应力分析

An Analysis of the Strain in Growth InAs/GaAs Quantum Dots

围绕InAs(InGaAs)/GaA叠层量子点电池的制作,本文通过文献研究和对近邻面生长实验研究认为,InAs/GaAs量子点生长形貌和特性受生长环境条件和生长条件影响。其中,客观、不可改变的外延层与衬底晶格常数、生长台面、超晶格结构等环境条件对量子点生长最为重要。这些环境条件通过生长应力,决定了量子点生长中的有序成核、生长、合并,直至出现缺陷的多晶体生长,其作用贯穿整个量子点生长过程。

Around InAs（InGaAs）/GaA stacked quantum dot cell production,the paper studies the growth of neighboring surfaces by literature research and experiment and deems that InAs/GaAs quantum dots growing morphology and growth characteristics are affected by growing conditions and environmental conditions.Among them,the objective,immutable epitaxial layer and the substrate lattice constant,growth countertops,and other environmental conditions super-lattice structure of quantum dot growth are most important.Growing environmental conditions determine the order nucleation,growth,consolidation,until the defected polycrystalline grows and quantum dots works throughout the whole growing process.