纳米多孔硅延期药的制备工艺和性能研究

The Preparation Technology and Property Research of Nanometer Porous Silicon Delay Composition

采用化学腐蚀法制备了纳米多孔硅粉,利用扫描电子显微镜对多孔硅粉的表面进行了形貌分析。采用共沉淀法制备了多孔硅延期药,在共沉淀过程中,BaCrO4沉淀生成的同时实现了对多孔硅粉的包覆及部分浸入与填充。利用光敏三极管对多孔硅延期药的延期时间进行测试,并与普通硅延期药进行燃速对比,结果表明:多孔硅延期药的平均燃速要大于普通硅延期药的平均燃速,而且延期精度要更优。

Chemical etching was used to prepare nanometer porous silicon, and its surface morphology was determined by scanning electron microscope. The co-precipitation was chosen as technique of making porous silicon delay composition. It is found that in the process of co-precipitation, the barium chromate precipitation generated with coating the porous silicon powder and partial entering into its holes. The delay time of porous silicon delay composition is tested with the photosensitive triode, and compared with ordinary silicon delay composition. The results show that the average burning rate of porous silicon delay composition is higher than that of ordinary silicon delay composition, and the delay precision is better.