基于计算机仿真技术掩膜圆晶片的电镀工艺模拟

Simulation of Electroplating Process on Patterned Silicon Wafer Based on Computer Simulation Technique

针对传统掩膜圆晶片存在的电镀工艺不完善和电镀质量差等问题,本文结合实际掩膜圆晶片电镀工艺,基于计算机仿真技术,模拟了在掩膜圆晶片上镀铜的瞬态电镀工艺。电镀仿真结果表明,通过电流采集器的添加,使铜电镀镀层厚度变得更加均匀,并且随着镀层的加厚,镀层的阻抗损耗减小,从而得到具有均匀厚度分布的掩膜圆晶片电镀工艺。

Aimed at the problems that there were imperfect process and poor plating quality in the traditional electroplating process on a patterned silicon wafer, based on the actual electroplating process on a patterned silicon wafer, the transient copper electroplating process on a patterned silicon wafer was simulated through computer simulation technology. Electroplating simulation results show that through the adding of the current collector, the copper coating thickness becomes more uniform, and with the increase of thickened coating, the plating resistance loss is reduced, thereby the electroplating process having a uniform thickness distribution on a patterned silicon wafer is obtained, and the electroplating process is improved.