摘要
针对低压透明集电极绝缘栅双极晶体管(ITC-IGBT)制造难度高的问题,基于内透明集电极(ITC)技术,将点注入局部窄台面(PNM)槽栅结构应用于IGBT中,提出一种600 V新型槽栅内透明集电极IGBT。采用仿真工具ISE-TCAD,对PNM-ITC-IGBT的导通特性、开关特性、短路特性等进行仿真,重点研究局域载流子寿命控制层的位置及其对内载流子寿命的影响,并与普通槽栅内透明集电极IGBT进行对比。结果表明,新结构具有较低的通态压降和关断损耗,尤其在短路特性方面,提高了槽栅IGBT的抗烧毁能力,且局域载流子寿命控制层的位置和寿命存在最佳范围。
A 600 V novel trench-gate internal transparent collector insulated gate bipolar transistor (ITC-IGBT) was presented, in which a point injection partially narrow mesa (PNM) trench structure was applied, due to high manufacturing difficulty of low-voltage transparent collector IGBT. By simulation tool ISE-TCAD, the conducting, switching and short-circuit characters of PNM-ITC-IGBT were simulated, especially the location of local carrier lifetime control (LCLC) layer and the effect of lifetime comparing with conventional trench ITC-IGBT. The result shows that the new structure has low on-state voltage drop and low switch loss, particularly the ruggedness is largely improved, and the position and lifetime of LCLC layer are located in an optimum range.
出处
《半导体技术》
CAS
CSCD
北大核心
2013年第10期745-749,775,共6页
Semiconductor Technology
基金
教育部博士点学科专项科研基金资助项目(20111103120016)