600V新型槽栅内透明集电极IGBT的仿真

Simulation of 600 V Novel Trench-Gate ITC-IGBT

针对低压透明集电极绝缘栅双极晶体管(ITC-IGBT)制造难度高的问题,基于内透明集电极(ITC)技术,将点注入局部窄台面(PNM)槽栅结构应用于IGBT中,提出一种600 V新型槽栅内透明集电极IGBT。采用仿真工具ISE-TCAD,对PNM-ITC-IGBT的导通特性、开关特性、短路特性等进行仿真,重点研究局域载流子寿命控制层的位置及其对内载流子寿命的影响,并与普通槽栅内透明集电极IGBT进行对比。结果表明,新结构具有较低的通态压降和关断损耗,尤其在短路特性方面,提高了槽栅IGBT的抗烧毁能力,且局域载流子寿命控制层的位置和寿命存在最佳范围。

A 600 V novel trench-gate internal transparent collector insulated gate bipolar transistor （ITC-IGBT） was presented, in which a point injection partially narrow mesa （PNM） trench structure was applied, due to high manufacturing difficulty of low-voltage transparent collector IGBT. By simulation tool ISE-TCAD, the conducting, switching and short-circuit characters of PNM-ITC-IGBT were simulated, especially the location of local carrier lifetime control （LCLC） layer and the effect of lifetime comparing with conventional trench ITC-IGBT. The result shows that the new structure has low on-state voltage drop and low switch loss, particularly the ruggedness is largely improved, and the position and lifetime of LCLC layer are located in an optimum range.