基于MEMS高阻硅基底的X波段微带天线

X-Band Microstrip Antennas with High Resistivity Silicon Substrates

对基于MEMS的高阻硅基底阵列式微带天线设计、制造及测试三部分内容进行了研究。此X波段阵列式微带天线以高阻硅为基底,采用背面刻蚀基底厚度一半的空气腔,使用侧馈的方式馈电,以二等功分器构成馈电网络。针对高阻硅脆性材料,天线加工采用深槽刻蚀、电镀、溅射、切割和封装。使用HFSS软件进一步分析刻蚀深度对天线驻波比、效率和损耗等电性能的影响,最终得出刻蚀深度应控制在221～224μm。对样品天线驻波比、增益和方向图进行测试,高阻硅基底阵列式微带天线样品测试驻波比为1.79,增益大于10 dB,测试结果满足设计和项目指标要求。

The design, process and test of the array microstrip antenna with high resistivity silicon substrates based on MEMS were studied. The feed network was constituted with the two-way equal power splitter with a side feedback mode in the X-band array microstrip antenna using the high resistivity silicon as the substrate and the air-filled cavity with half of the substrate thickness on the back substrate by etching. In view of the high resistivity silicon brittleness material, the processes of the deep groove etching, electroplating and sputtering, cutting and packaging were used for the antenna. The influences of the etching depth on the electrical properties including antenna standing wave ratio, efficiency and loss were further analyzed by HFSS software. Finally it is concluded that the etching depth should be controlled from 221 to 224 μm. The standing wave ratio, gain and pattern of the antenna sample were tested. The standing wave ratio and gain of the array microstrip antenna sample with high-resistivity-silicon substrates are 1.79 and above 10 dB, respectively. The test results meet the requirements of design and item index.