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蓝光磷光微腔有机电致发光器件特性的研究 被引量:4

Characteristics of blue phosphorescent microcavity organic electroluminescent light emitting device
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摘要 使用典型蓝色磷光材料Firpic作为磷光金属微腔有机电致发光器件(OLED)的发光层,以高反射的Al膜作为阴极顶电极和半透明的Al膜作为阳极底电极,其结构为Glass/Al(15nm)/MoO3(30nm)/NPB(40nm)/mCP:Firpic(30nm,x%)/BCP(10nm)/Alq(20nm)/LiF(1nm)/Al(100nm),x%为Firpic的掺杂质量分数,分别为4%、6%、10%、12%和14%。实验制备了不同的OLED,比较了测量角度和不同掺杂浓度对OLED发光特性的影响。结果显示,对发光面积为0.8cm2的器件,测量角度的不同导致蓝光辐射波长蓝移,色坐标发生变化,器件的510nm和472nm两个峰值变化不相同,随着角度的增大,较大的峰值不断衰减,而较小的峰值不断增强;并且,当掺杂浓度为12%时,OLED得到最好的发光性能,12V电压驱动下有最大亮度18 870cd/m2,说明此时的主客体间能量转移最充分。 The blue phosphor Firpic-based electro-phosphorescent metallic microcavity organic light-emit- ting device (OLED) employs a structure of glass/Al (15 nrn)/MoO3 (30 nm)/NPB (40 nm)/mCP:Fir- pic (30 nm,x%)/BCP(lO, nm)/Alq(20 nm)/LiF(1 nm)/Al(100 nm),in which x% (4%,6%,10%, 12 %, 14 % ) is the doping mass fraction of Firpic, We prepared different OLEDs and compared the influ- ence of measuring angle and dopant concentration on the luminescence properties of OLEDs. The results show that for the devices with light-emitting area of 0. 8 cme ,the difference of measuring angles results in shift of blue emission and changes of color coordinates. There were two peaks of the devices, which are at 510 nm and 472 nm. Their variations are different. The larger peak is attenuated while the smaller peak is continuously enhanced with the increase of the measuring angle. Furthermore, when the doping concentration is 12% ,the OLED has the best performance. The device has the maximum brightness of 18 870 cd/m2 under 12 V,which implies the energy transfer between host and guest is the fullest.
出处 《光电子.激光》 EI CAS CSCD 北大核心 2013年第10期1873-1877,共5页 Journal of Optoelectronics·Laser
基金 国家自然科学基金(61076066) 陕西省科技统筹创新工程计划(2011KTCQ01-09) 陕西科技大学自然科学基金(ZX09-31)资助项目
关键词 有机电致发光器件(OLED) 蓝色磷光 微腔 organic light-emitting devices (OLEDs) blue phosphorescence microcavity
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参考文献19

  • 1ZHAO Juan,YU Jun-sheng,LI Lu,et al. Effects of ultrathinlayer thickness of iridium complex phosphor (t-bt)2 lr (acac) on the performance of organic light emitting de-vices[J]. Journal of Optoelectronics . Laser,2011,22(2):170-174.
  • 2赵娟,于军胜,李璐,蒋亚东.(t-bt)_2Ir(acac)超薄层厚度对有机电致发光器件性能的影响[J].光电子.激光,2011,22(2):170-174. 被引量:7
  • 3LI Yan -wu,LIU Peng -yi,HOU Lin -tao. Influence of cath-ode deposition and the spacing layer on performance oforganic light emitting diodes[J]. Journal of Optoelectron-ics . Laser,2010,21(5) :672-674.
  • 4李艳武,刘彭义,侯林涛,吴冰.阴极蒸镀和隔离层对有机发光二极管性能的影响[J].光电子.激光,2010,21(5):672-674. 被引量:7
  • 5林慧,于军胜,张伟.Investigation of top-emitting OLEDs using molybdenum oxide as anode buffer layer[J].Optoelectronics Letters,2012,8(3):197-200. 被引量:10
  • 6DING Lei,ZHANG Fang-hui,LI Yan-fei,et al.High saturat-ed blue phosphorescent organic light emitting devices[J]. Journal of Optoelectronics . Laser, 2011, 22 (11):1617-1620.
  • 7丁磊,张方辉,李艳飞,梁田静,张静.高饱和度蓝色磷光有机发光器件[J].光电子.激光,2011,22(11):1617-1620. 被引量:11
  • 8Bodo H, Wallikewitz,Matthias de la Rosa,et al. A lasingorganic light-emitting diode [ J]. ADV. Mater, 2010, 22(4):531-534.
  • 9Liu Z W,Helander M G, Wang Z B,et al. Efficient bilayerphosphorescent organic light-emitting diodes: Direct holeinjection into triplet dopants[J]. Appl. Phys. Lett. , 2009,94:113305.
  • 10Shin D S,Han D P,Oh J Y. Study of droop phenomena inInGaN-based blue and green light emitting diodes by tem-perature dependent electroluminescence [ J]. AppliedPhysics Letters,2012,100(15) :153506.

二级参考文献94

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同被引文献36

  • 1高强,尹勇明,于晶,纪永成,闻雪梅,刘士浩,谢文法.基于双极传输母体的高效有机磷光发光器件[J].发光学报,2014,35(6):717-721. 被引量:6
  • 2谢静,张德强,王立铎,段炼,乔娟,邱勇.Improved Performance of Organic Light-Emitting Diodes with MgF2 as the Anode Buffer Layer[J].Chinese Physics Letters,2006,23(4):928-931. 被引量:1
  • 3Tang C W,Van Slyke $ A,Organic electroluminescent di- odes[J]. Appl. Phys. Lett. ,1987,51(12) :913-915.
  • 4陈金鑫,陈锦地,吴忠帜.白光OLED照明[M].上海:上海交通大学出版社,2011.
  • 5Kepler R G,Beeson P M,Jacobs S J,et al. Electron and hole mobility in tris (8-hydroxyquinolinolato[N], O8) alu-minum[J]. Appl. Phys. Lett., 1995,66 (26) :3618-3620.
  • 6DENG Shen-bo,Lee S T,Webb D P,et al. Carrier trans- port in thin films of organic electroluminescent materials [J]. Synth. Met. , 1999,107(2) : 107-109.
  • 7Hill I G, Milliron J, Schwartz JKahn A. Organic semicon- ductor interfaces:electronic structure and transport prop- erties[J]. AppI. Surf. Sci., 2000,166(1--4) : 354-362.
  • 8Olivier J, Servet B, Vergnolle M, et al. Stability/instability of conductivity and work function changes of ITO thin films, UV-irradiated in air or 'vacuum: Measurements by the four-probe method and by Kelvin force microscopy [J]. Synth. Met. ,2001,122(1) :87-89.
  • 9Li Y Q,Rizzo A,Mazzeo M,et al. White organic light-e- mitting devices with CdSe/ZnS quantum dots as a red e- mitter[J]. J. Appl. Phys., 2005, 97 (11): 113501. 1- 113501.4.
  • 10SUN Zheng-yi,DING Bao-fu,WU Bo,et al. LiF layer at the interface of Au cathode in organic light-emitting Devices: A nonchemical induced carrier injection enhancement[J]. J. Phys. Chem. C, 2011,116(3) : 2543-2547.

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