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水浴温度对化学水浴法制备的CdS薄膜结构及性能的影响 被引量:1

Effect of bath temperature on structure and property of CdS thin film by chemical bath deposition
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摘要 采用化学水浴法以醋酸铵和醋酸镉为原料在玻璃基底上制备CdS薄膜。研究了溶液温度对CdS薄膜的结构及光电性能的影响,利用X射线衍射仪表征了CdS薄膜的物相结构,扫描电子显微镜观察了CdS薄膜的表面形貌,紫外-可见分光光度计分析了CdS薄膜的透光率及禁带宽度,绝缘电阻测试仪测试了CdS薄膜的表面电阻。实验结果表明,随着水浴温度的提高,CdS薄膜C(111)/H(002)衍射峰强度增加,择优取向生长显著且结晶度提高,晶体颗粒长大且薄膜更加致密。透光率平均达到了78%以上,表面电阻达到108Ω,符合CIGS薄膜太阳电池缓冲层基本要求。 CdS thin films were prepared on the glass substrate by chemical bath deposition (CBD) with ammonium acetate and cadmium acetate as raw materials. The effect of bath temperature on the structure and photoelectric properties of the resulting CdS thin films was investigated. The crystal morphology was characterized by X ray diffraction(XRD) and scanning electron microscopy(SEM),the optical transmittance and the optical band gap were detected by UV-visible absorption spectra (UV-vis), the surface resistance of CdS thin films was tested by insulation resistance tester. The results show that the C(111)/H(002) diffraction peak intensity of CdS films increases with the increasing of bath temperature, corresponding that the CdS films shows the preferred orientation and the high level of crystallization. Consequently, CdS crystal size grows up and the iilm is more compact. The optical transmittance of the CdS films is more than 78% and the surface resistance reach 10^8Ω, thus meeting the demand for buffer layer of CIGS thin-film solar cells.
出处 《大连工业大学学报》 CAS 北大核心 2013年第4期283-285,共3页 Journal of Dalian Polytechnic University
关键词 CDS薄膜 化学水浴法(CBD) 沉积温度 铜铟稼硒(CIGS) CdS thin film CBD bath temperature CIGS
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