α-Si：H/SiNx叠层薄膜对晶体硅太阳电池的钝化

Passivation property of α-Si:H/SiN_x stack-layer film in crystalline silicon solar cells

利用等离子增强化学气相沉积法在硅衬底上制备了α-Si:H/SiNx叠层薄膜用来钝化晶体硅太阳电池.用有效少子寿命表征薄膜的钝化效果,通过模拟高频电容-电压测试结果分析薄膜钝化的机理.将α-Si:H/SiNx薄膜的钝化效果与使用相同方法制备的α-Si:H薄膜进行对比,发现α-Si:H/SiNx薄膜的钝化效果明显优于α-Si:H薄膜.不同温度下热处理后,α-Si:H/SiNx薄膜的钝化效果随着温度的上升先提高后降低.在最佳热处理温度300°C下进行热处理,α-Si:H/SiNx薄膜的钝化效果能在90 min内始终保持优于α-Si:H薄膜.模拟计算结果表明,α-Si:H/SiNx薄膜的钝化效果与α-Si:H/Si界面处的态密度有关.

Theα-Si：H/SiNx stack-layer films are piepared by plasmα-enhanced chemical vapor deposition to passivate crystalline silicon solar cells. Effective lifetime of minority carrier is used to characterize their passivation property and the passivation mechanism is analyzed by simulating the high-frequency capacitance-voltage curves. It is found that compared toα-Si：H films prepared by the same method, α-Si：H/SiNx films show better passivation property. Through thermal treatment at different temperatures, the passivation property ofα-Si：H/SiNx films is improved to the best at 300 ？C first, and then degraded with rising temperature. Annealing at 300？C can makeα-Si：H/SiNx films show a better passivation property thanα-Si：H films in 90 min. Simulation results indicate that the passivation property ofα-Si：H/SiNx films is mainly determined by the state density at theα-Si：H/Si interface.