77K硅双极晶体管H_(FE)参数的原理与设计

Principle and Design of H_FE Parameter of Silicon Bipolar Transistors at 77K

分析了双极晶体管电流增益随温度下降而下降的机理,提出了低温下H_(FE)与发射区杂质浓度N_E的新关系,由此阐述了77K双极晶体管H_(FF)参数的设计原理,理论分析和实验结果相一致。在上述基础上研制了一种适于液氮温度状态工作的非晶硅发射区晶体管.

In this paper, the mechanism of the decrease of current gain with decreasing temperature in silicon bipolar transistors is analysed, and a new relationship between H_(FE) and the doping concentration of the emitter N_E at low temperature is presented. The principle of the design of H_(FE) parameter of silicon bipolar transistor operating at 77K is clarified. The theoretical analyses are well in accord with the experimental results. On the basis, a novel transistor with the amorphous-silicon emitter for liquid-nitrogen temperature operation is fabricated.