摘要
研究了Ka波段变频放大电路的设计及其温度补偿技术,分析了上变频放大模块的基本原理,分别对射频增益及检波电压进行了温度补偿,提出了一种优异温度稳定性、高线性度、高增益稳定性的总体设计方案。该变频放大模块由放大电路、温补电路、混频电路、滤波电路及功率放大器等单元电路组成。运用Agilent ADS软件完成了模块的整体电路设计。同时,介绍了一种基于场仿真软件和实测相结合的方法,建立毫米波多芯片组件中互连的键合线模型,将键合线的寄生电感融入了上变频放大模块电路设计中,显著提高键合线互连电路的频率响应。采用多芯片组装工艺制作了高性能的变频放大模块,实现了在Ka波段输出功率>于30.6 dBm,全温范围功率波动<0.8 dB,全温检波电压指示波动<0.2 V,测试结果与仿真结果一致。
This paper studies the Ka-band frequency conversion amplifier circuit design and its temperature compensation technology. The basic principles of up-conversion amplifier module are discussed, RF gain and detector voltage temperature compensation is implemented, and an overall design with good temperature stability, linearity, and gain stability is presented. The module is composed of the unit circuit of the amplification circuit, temperature compensation circuit, mixer circuit, filter circuit and power amplifier. Agilent ADS software is used to develop the overall circuit design of the modules. Meanwhile, a combination of field simulation software and measurement is adopted to establish the model of the millimeter-wave components of multi-chip interconnect bonding wire, which integrates the parasitic inductance of the bond wires into the up-conversion amplifier module circuit design, thus significantly increas- ing the frequency response of the bonding wire circuit interconnection. The multi-chip assembly process is adopted for the production of high-performance variable frequency amplifier module. Test results show that the Ka-band output power is greater than 30. 6 dBm with the full temperature range of power fluctuation less than 0. 8 dB and the instructions full temperature detector voltage fluctuation less than 0. 2 V, which is consistent with simulation results.
出处
《电子科技》
2013年第10期113-116,共4页
Electronic Science and Technology