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高压下GaAs和AlAs结构及弹性性质的第一原理计算(英文) 被引量:2

First-principles calculations for the structural and elastic properties of GaAs and AlAs under different pressures
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摘要 基于第一性原理平面波超软赝势密度泛函理论方法计算了ZB-GaAs,RS-GaAs,CsCl-GaAs,NiAs-GaAs,WZ-GaAs和ZB-AlAs,RS-AlAs,NiAs-AlAs的结构参数、体弹模量及体弹模量对压强的一阶导数.计算了GaAs和AlAs在不同压强下的弹性常数,以及不同结构间的相变压强.得到了比较满意的计算结果. A first-principles plane wave method with the ultrasoft pseudopotential scheme in the frame of the density functional theory (DFT) is employed to calculate the structural and lattice parameters, the bulk modulus B0 and its pressure derivative B0 of the ZB-GaAs, RS-GaAs, CsCI-GaAs, NiAs-GaAs, WZ-GaAs and ZB-A1As, RS-AIAs, NiAs-A1As. The elastic parameters of the GaAs and AlAs are calcu- lated. We also calculate the phase transition pressures between different phases of GaAs and AlAs. Our results are satisfactory and consistent with the other results.
出处 《四川大学学报(自然科学版)》 CAS CSCD 北大核心 2013年第5期1032-1038,共7页 Journal of Sichuan University(Natural Science Edition)
基金 国家自然科学基金(11247262)
关键词 弹性性质 密度泛函 GaAs和AlAs elastic properties, density functional theory, GaAs and AlAs
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  • 1Wang Z,Lazor P.Saxena S K,Artioli G.Highpressure Raman spectroscopic study of spinel(ZnCrzO4)[J].J Sol State Chem,2002,165(1):165.
  • 2Fan D,Zhou W,Liu C,et al.Thermal equation of state of natural chromium spinel up to 26.8 GPa and 628 K[J].J Mater Sci,2008,43(16):5546.
  • 3Levy D,Diella V,Pavese A,et al.P-V equation of state,thermal expansion,and P-T stability of synthetic zincochromite(ZnCr2O4 spinel)[J].Am Mineral,2005,90(7):1157.
  • 4Catti M,Freyria F F,Zicovich C,Dovesi R.Highpressure decomposition of MCr2O4 spinels(M=Mg,Mn,Zn)by ab initio methods[J].Phys Chem Miner,1999,26(5):389.
  • 5Payne M C,Teter M P,Allen D C,et al.Iterative minimization techniques for ab initio total-energy of calculations:molecular dynamics and conjugate gradients[J].Rev Mod Phys,1992,64(4):1045.
  • 6Milman V,Winkler B,White J A,et al.Electronic structure,properties,and phase stability of inorganic crystals:a pseudopotential plane-wave study[J].Int J Quant Chem,2000,77(5):895.
  • 7Vanderbilt D.Soft self-consistent pseudopotentials in a generalized eigenvalue formalism[J].Phys Rev B,1990,41(11):7892.
  • 8Perdew J P,Burke K,Ernzerhof M.Generalized gradient approximation made simple[J].Phys Rev Lett,1996,77(18):3865.
  • 9Pfrommer B G,C(o)tèM,Louie S G,Cohen M L.Relaxation of crystals with the quasi-Newton method[J].J Comput Phys,1977,131(1):233.
  • 10Monkhorst H J,Pack J D.Special points for Brillouin-zone integrations[J].Phys Rev B,1976,13(12):5188.

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  • 1潘志军,张澜庭,吴建生.掺杂半导体β-FeSi_2电子结构及几何结构第一性原理研究[J].物理学报,2005,54(11):5308-5313. 被引量:28
  • 2闫万珺,谢泉,张晋敏,肖清泉,梁艳,曾武贤.铁硅化合物β-FeSi_2带间光学跃迁的理论研究[J].Journal of Semiconductors,2007,28(9):1381-1387. 被引量:16
  • 3Mitterer C. Borides in thin film technology[J]. J Solid State Chem, 1997, 133(1): 279.
  • 4Kaner R B, Gilman J J , Tolbert S H. Designing superhard materials[J]. Science, 2005, 308: 1268.
  • 5Basu B, Raju G B, Suri A K. Processing and Prop- erties of Monolithic TiBz-Based Materials [J]. Int Mater Rev, 2005, 51: 352.
  • 6Varin R A, Chiu C, Li S, etal. Wexler D, Applica- tion of controlled and electrical discharge assisted mechanical alloying for the synthesis of nanocrystal- line MgBz superconducting compound[J]. J Alloys Comp, 2004, 370.. 230.
  • 7Zhou W, Wu H, Yildirim T. Electronic, dynami- cal, and thermal properties of ultra-incompressible superhard rhenium diboride: A combined first-prin- ciples and neutron scattering study[J]. Phys Rev B, 2007, 76: 184113.
  • 8Vajeeston P, Ravindram P, Ravi C, et al. Electron- ic structure, bonding, and ground-state properties of A1B2-type transition-metal diborides [J]. Phys Rev B, 2001, 63: 045115.
  • 9Shein I R, lvanovskii A L. Elastic properties of mono- and polyerystalline hexagonal Al-like diborides of s, p and d metals from first-principles calcutations[J]. J Phys Condensed Matter 2008, 20: 415218.
  • 10Oguchi T. Cohesion in A1Bz-type diborides: a first- principles study[J]. J Phys Soc Jpn,2002,71: 1495.

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