考虑通孔横向热传输效应的三维集成电路热分析

Thermal Management of 3D Integrated Circuits Considering Horizontal Heat Transfer Effect

考虑横向热传输效应,构造一种包含通孔结构的叠层芯片三维热传输模型.在具体的工艺参数下验证叠层芯片层数、通孔密度、通孔直径和后端线互连层厚度对三维集成电路热传输的影响.结果显示,采用该模型仿真得到的各层芯片温升要低于不考虑横向热传输时所得到的温升,差异最大可达10%以上,并且集成度要求越高,其横向热传输效应的影响越明显.该模型更符合实际情况,能够更准确地分析三维集成电路的各层芯片温度.

A three-dimensional analytical heat transfer model for stacked chips is developed, which takes into account horizontal heat transfer effect in three-dimensional integrated circuits （3D ICs） with through silicon via （TSV）. Effects of horizontal heat transfer is analyzed with number of strata, TSV density, TSV diameter and thickness of BEOL layer under specific process and thermal parameters. It indicated that temperature rise simulated by the model is lower compared with result not considering horizontal heat transfer effect. Difference of temperature rise can be above 10%. Effect of horizontal heat transfer on thermal management of 3D ICs is more obvious with increasing of integrated level. The model conforms to actual situation. It is more accurate in analyzing temperatures of stacked chips in 3D ICs.