摘要
碲锌镉晶体生长质量与生长条件有着密切的关系。实时检测晶体生长参数,改进生长条件是生长高质量晶体的关键。为此设计了一个参数监控系统,实现对碲锌镉晶体生长过程参数的实时监控、记录、存储和显示。通过对各控制参数数据分析和比较,找到了碲锌镉单晶体生长缺陷的根源,改进了生长设备,制备出了高质量的碲锌镉单晶体。
Cadmium zinc telluride （CdZnTe） crystal growth quality is closely related to growth parameters. De- tecting the crystal growth parameters and improving growth conditions are the key to the crystal growth. A data acquisition system is designed to realize real-time monitoring, recording, storing and displaying of CdZnTe growth process parameters. Through analysis and comparison of the various control parameters, the root of CdZnTe single crystal growth defects is found, the growth equipment is improved, and the high quality CdZnTe single crystal is grown out.
出处
《测控技术》
CSCD
北大核心
2013年第10期21-24,共4页
Measurement & Control Technology
基金
国家自然科学基金资助项目(50372036)
关键词
碲锌镉单晶体
晶体生长设备
晶体生长参数
数据采集
CdZnTe single crystal
crystal growth equipment
crystal growth parameters
data acquisition
