掺磷纳米硅薄膜电导及压阻效应的研究

Structure Characteristics and Piezo-Resistance Effect in Hydrogenated Nanocrystalline Silicon Films

研究了掺磷对纳米硅薄膜微结构和电学特性的影响 .指出气相掺杂能使nc Si:H膜中磷原子浓度达到原子分数 5%的水平 ,掺杂效率可达 η≈ 1 .0 % .掺磷后能使薄膜暗电导率提高两个数量级 ,达到σ =1 0 -1～ 1 0 1S·cm-1,电导激活能ΔE =( 1～ 6)× 1 0 -2 eV水平 .掺磷能促使nc Si:H膜更加有序化且晶粒尺寸变小 。

A study of electrical properties of P doped hydrogenated nanocrystalline silicon films (nc Si:H) indicate that the room temperature dark conductivity σ is in the range of 10 -1 -10 1S·cm -1 ,two magnitudes higher than that of undoped nc Si:H films. We also found the relationship between doping concentration N p and σ , that is strikingly similar to the pc Si films. The conductivity activation energy Δ E of P doped nc Si:H is (1-3)×10 -2 eV, lower than the undoped nc Si:H films. Otherwise, we investigated the piezo resistance effect of P doped samples. Compared with undoped nc Si:H samples, the piezo resistance coefficient K is lower. We discussed the effect of hydrogen content to the K values.