电荷自旋注入机制分离的新型稀磁半导体

New types of diluted magnetic semiconductors with decoupled charge and spin doping

兼具电荷属性和自旋特性的稀磁半导体将有可能突破Moore定律的瓶颈。文章介绍了作者实验室近年来发现和研究的电荷自旋注入机制分离的新型稀磁半导体,目前这类新型稀磁半导体的铁磁转变温度可以与相比拟,并有望进一步实现室温铁磁。

Diluted magnetic semiconductors （DMSs） that combine both charge and spin quantum freedom are promising for developing new generation information technologies. We report our recent work on new types of DMSs with decoupled charge and spin doping. Their highest Curie temperature in the bulk form is comparable to that of typical （Ga, Mn）As, making room-temperature ferromagnetism within reach.