摘要
提出一种适用于flash memory的无片外电容的低压差稳压器设计.利用米勒补偿和自适应基准技术获取高稳定性和增强的瞬态.该低压差稳压器利用片内小电容作为频率补偿的同时还通过它的耦合效应形成高速反馈环路以获得快速的瞬态响应.该电路在低负载情况下具有很低的静态电流和在高负载情况下的高电流效率.提出的稳压器采用90nm工艺,在1.45V到3.8V操作电压范围内,输出1.3V的调制电压和10mA的最大输出电流.对于Flash Memory应用来说,当负载瞬态变化时,提出的低压差稳压器的建立时间仅仅为20ns.芯片面积是40μm*280μm.
A low-dropout regulator （LDO） without off-chip capacitor for flash memory application is presented in this paper. Techniques of Miller compensation and adaptive biasing are employed to achieve high stability and enhanced loop bandwidth while maintaining low quiescent current and high current efficiency. Simultaneously, inner small capacitor is used to enhance load regulation through its coupling effect to implement high-speed feedback loop. The proposed LDO is implemented in 90nm process, and can regulates the output voltage at 1. 3 V from supply ranging from 1.45-3.8 V, providing maximum output current of 10 mA. The settling time of the proposed LDO is only 20 ns when output current changes from low to high for flash memory. The active chip area is 40μm ＊ 280μm.
出处
《微电子学与计算机》
CSCD
北大核心
2013年第10期101-104,共4页
Microelectronics & Computer
关键词
低压差稳压器
无片外电容
缓冲级
自适应基准
摆率增强
low-dropout voltage regulator
output-capacitorless
buffer
adaptively biasing
slew-rate enhancement
