工作压对射频磁控溅射ZAO薄膜微结构及光电性能影响的研究

Influence of Working Pressure on Micro-structrure and Photoelectric Properties of the ZAO Thin Films Prepared by RF Magnetron Sputtering

运用射频磁控溅射技术,改变工作压(3～10 Pa)在玻璃衬底上生长透明导电ZnO∶Al(ZAO)样品,采用XRD、紫外-可见分光光度计、霍尔效应测量仪及SEM对薄膜微结构、厚度及其光电性能表征。结果发现:随着工作压增大,样品XRD曲线由多峰转变为(002)单峰,峰强变大半高宽减小,晶粒尺寸由10.01 nm增大到13.46 nm,薄膜结晶性能变好;紫外可见光光谱在400～760 nm波长区间平均透射率均在85%以上,且在400 nm以下均有吸收边峰出现,样品带隙宽度随工作压增加有蓝移现象,样品厚度随工作压增加从1085 nm减小到781 nm。样品电阻率随工作压从3～6 Pa增加由0.5×10-4Ω·cm增大到35×10-4Ω·cm,在6～10 Pa区间有减小趋势。

The Al-doped ZnO （ZAO） films were obtained on the glass substrate by RF magnetron sputtering technique, changing the working pressure from 3 Pa to 10 Pa. The samples were characterizated by XRD, UV-visible spectrophotometer and SEM . All films showed average transmission over 85% between 400 nm and 760 nm wavelength and an absorption edge peak below 400 nm. With increasing the working pressure, the multi-peaks transformed into a （002） single peak, and the （002） peak enhanced and FWHM decreased in XRD curves, and the grain size increased from 10.01 nm to 13. 46 nm. The thickness of the films decreases from 1085 nm to 781 nm and the width of the band gap have a blue shift from 3. 049 eV to 3. 082 eV with the increase of working pressure. The resistivity of the films increased from 0.5 ×10^-4Ω·cm to 35 ×10^-4Ω·cm with the working pressure varied from 3 Pa to 6 Pa and then decreased between 6 Pa and 10 Pa.