摘要
对不同年代IGBT通用型模块的主要数据逐一对比分析。通过分析发现，随着应用外延片制造到区熔单晶硅技术的进步。极限参数中额定电压参数的测试条件在进步，表明了IGBT模块的阻断性能在进步；不同壳温下的额定电流差距在缩小；集电极耗散功率随着集电极一发射极饱和电压的降低而不再需要很高；栅一源极阈值电压的离散性在缩小，栅一源极闽值电压在提高，提高了抗电磁干扰能力；开关性能在提高；栅极体电阻参数的给出表明了IGBT模块中各IGBT芯胞开通／关断的一致性在提高。
Comparative analysis the main data of the IGBT＇s universal modules made in various decades,by which indicates that with the improvement progress from utilize epitaxial wafer manufacturing to zone melting silicon single crystal,the rated voltage parameters in limit parameter testing are increasing. Consequently,introduces the following IGBT＇s parameters that has been improving, better blocking performance, reducing the gap of rated current in the case of different surface temperature,extremely high collector dissipation power is no more needed due to the reduction of collector-emitter＇s saturation voltage,reducing the discreteness of gate-source voltage threshold meanwhile increasing the gate-source voltage threshold which could improve both the anti-EMI capabilities and the switching performances. By introducing the gate resistance shows that the on-off uniformity of the IGBT cell inside IGBT module is improving.
出处
《电源技术应用》
2013年第10期1-4,共4页
Power Supply Technologles and Applications
