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AlGaInP基薄膜发光二极管芯片生产工艺技术

AlGaInP-based thin-film light emitting diode chip
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摘要 介绍公司研发和生产AlGaInP薄膜RS系列LED芯片产品产业化技术现状。通过采用多项先进工艺和质量控制技术,产业化生产的RS-LED外延片和芯片具有良好的性能及可靠性。其中RS-LED芯片产品通过采用全方位反射镜、衬底转移、金属键合和表面粗糙化等关键工艺技术,实现了良好的大电流特性和电流扩展性能,亮度指标大幅提升,红光RS-LED芯片最高亮度达550mcd,Au-To封装后器件光通量可达3.5lm。针对RS-LED芯片生产工艺的特点,探讨了产业化生产的关键工序、生产过程质量控制点以及质量控制关键参数等,提出了切实有效的生产过程质量控制方法,并付诸实践。 The article presents the technical status of A1GaInP Light Emitting Diode (A1GalnP-LED) Thin-Film Reflect substrate (RS) series of chip products in San'an Optoelectronics Co., Ltd. By adopting many advanced technologies and quality control techniques, the epitaxial slices and chips of RS-LED produced by industrialization have good performance and reliability. The RS-LED chips have the high-current and current spreading characteristics by using key processing technologies including Omni directional reflector (ODR), substrate transfer, metallic bonding and surface roughness, and lead to a large rise in brightness. The highest luminance of the red RS-LED ehips can reach 550mcd, and relevant luminous flux can be 3.51m after capsulation. Based on the characteristics of production technique, the key process, the quality control point and key parameter in industrialization process are analyzed, and the effective quality control method in production process is proposed to put into practice.
作者 蔡文必
出处 《闽西职业技术学院学报》 2013年第3期96-100,共5页 Journal of Minxi Vocational and Technical College
关键词 薄膜发光二极管 镜面反射衬底 全方位反射镜 金属键合 thin-film light emitting diode reflect substrate omni directional reflector metallic bonding
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参考文献4

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