一种高压大电流半导体放电管的研究

A high-voltage and high-current semiconductor arresters

针对常规半导体放电管在超大浪涌电流作用下,易局部过热而损坏这一问题,采用镓闭管扩散代替硼扩散、台面工艺解决二氧化硅不能掩蔽镓扩散所带来的问题、玻璃钝化工艺实现高压结面保护等方法。实验结果表明,通过镓扩散、台面刻槽、玻璃钝化和钛镍银多层金属化等工艺,提高了放电管的启动保护电压和最大浪涌电流,其最大浪涌电流达到6 kA,比设计值5 kA提高了20%。

In this paper, in order to solve the problem that the traditional arrester is easy to be damaged due to partial bver- heating when the arrester works with a high surge current, gallium is used instead of boron under closed ampoule vacuum diffusion; mesa technology is used to solve the problem caused by gallium diffusion which cannot be masked by silicon diox- ide ; glass passivation technology is used to protect junction surface under high voltage. Experimental results show that tech- nologies including gallium diffusion, mesa technology, glass passivation, and titanium-nickel-silver multilayer metalliza- tion, definitely improved the break-over voltage and the maximum transient surge cmTent of semiconductor arresters. More specifically, the maximum transient surge current reaches 6 kA which is 20% higher than the design value 5 kA.