Ce,Sm联合掺杂TiO_2薄膜制备及其电致变色特性

Preparation and Electrochromic Properties of TiO_2 Films Doped Ce and Sm

以钛酸四丁酯、硝酸铈和硝酸钐为主要原料,采用溶胶-凝胶法在ITO导电玻璃基片表面制备Ce,Sm联合掺杂TiO_2电致变色薄膜,Ce,Sm掺杂的摩尔分数分别为0,2%,5%和10%.采用电化学工作站和紫外可见分光光度计,研究了薄膜的循环伏安特性和光谱特性.结果表明,Ce,Sm的摩尔分数为2%时,薄膜的峰值电流最大,电荷存储能力最强,注入电荷密度为15.12mC·cm^(-2),循环可逆性K值为0.7.Ce,Sm的摩尔分数为5%和10%时,随着掺杂量的增加,薄膜的峰值电流减小,电荷存储能力变弱.Ce,Sm掺杂TiO_2薄膜在可见光范围内具有更好的光学透明度,着色时颜色很浅,着色态和褪色态的光谱透过率几乎一致,均在90%以上,可以在电致变色玻璃中作为离子存储材料.

TiO2 films doped Ce and Sm were prepared by sol-gel methods with butyltitanate （ Ti （ OC4 H9 ） 4 ）, cerium nitrate （ Ce （ NOa ） 3·6H20 ） and samarium nitrate （Sm （ NO3 ） 3·6H20 ） as main raw materials on the ITO conductive glass substrate. The molar fractions of Ce and Sm are 0, 2% , 5% and 10% , respectively. Cyclic voltammetry and optical properties were studied using the electrochemical workstation and ultraviolet visible spectroscopy. The results showed that the film had the largest peak current and strongest ion storage capacity when Ce and Sm doping content was 2% , the injection charge density was up to 15.12 inC. cm-2 and K value was 0.7. When the contents of Ce and Sm increased to 5% and 10% , the peak current decreased and the charge storage ability reduced with the increase contents of Ce and Sin. The colored state of TiO2 films doped Ce and Sm was pretty shallow. Transmittance was more than 90% in both the colored state and bleached state. Therefore TiO2 films doped Ce and Sm had good transparency in the visible light range and would be used as ion storage materials in the electrochromic glass.