摘要
The physical vapour deposition （PVD） of gallium monotelluride （GaTe） in different crystalline habits was established in the growth ampoule, strongly depending on the temperature gradient. Proper control on the temperatures of source and growth zones in an indigenously fabricated dual zone furnace could yield the crystals in the form of whiskers and spherulites. Optical and electron microscopic images were examined to predict the growth mechanism of morphologies. The structural parameters of the grown spherulites were determined by X-ray powder diffraction （XRD）. The stoichiometric composition of these crystals was confirmed using energy dispersive analysis by X-rays （EDAX）. The type and nature of electrical conductivity were identified by the conventional hot probe and two probe methods, respectively. The mechanical parameters, such as Vickers microhardness, work hardening index, and yield strength, were deduced from microindentation measurements. The results show that the vapour grown p-GaTe crystals exhibit novel physical properties, which make them suitable for device applications.
The physical vapour deposition （PVD） of gallium monotelluride （GaTe） in different crystalline habits was established in the growth ampoule, strongly depending on the temperature gradient. Proper control on the temperatures of source and growth zones in an indigenously fabricated dual zone furnace could yield the crystals in the form of whiskers and spherulites. Optical and electron microscopic images were examined to predict the growth mechanism of morphologies. The structural parameters of the grown spherulites were determined by X-ray powder diffraction （XRD）. The stoichiometric composition of these crystals was confirmed using energy dispersive analysis by X-rays （EDAX）. The type and nature of electrical conductivity were identified by the conventional hot probe and two probe methods, respectively. The mechanical parameters, such as Vickers microhardness, work hardening index, and yield strength, were deduced from microindentation measurements. The results show that the vapour grown p-GaTe crystals exhibit novel physical properties, which make them suitable for device applications.
基金
financially supported by the Major Research Project of University Grants Commission,New Delhi(No.33-38/2008-10(SR))
