双PWM变频器中的IGBT模块损耗

Losses in IGBT modules in dual-PWM converters

在电力电子变换器中,功率器件的损耗是系统损耗的主要部分,准确地计算其损耗,建立适用于实际应用的损耗模型可以指导系统的器件选型和散热设计。该文详细分析了绝缘栅双极型晶体管(IGBT)及其反并联二极管的开关过程,建立了器件的通态和瞬态的损耗模型,并考虑了结温、杂散参数等因素的影响。在此基础上推导了系统在空间矢量脉宽调制(SVPWM)方式下1个周期中的通态损耗和开关损耗的平均功率,从而建立了一套比较实用的考虑结温对器件损耗影响的损耗计算方法。最后在一台55 kW双脉宽调制(PWM)变频调速系统样机上进行了实验验证。

As the major part of the system losses, losses in semiconductor devices affect device selection and thermal design. Therefore, these losses must be accurately modeled. This study analyzes transients in insulated gate bipolar transistors （IGBT） and on-state losses in their anti-parallel diodes as functions of the junction temperature and other parameters. The model gives the average losses in IGBT modules during a fundamental cycle using space vector pulse width modulation （SVPWM） as a function of the junction temperature. The method is verified for a dual pulse width modulation （PWM） converter driving for a 55 kW induction motor.